Thank you for your interest in our available 21049369-101 Microcircuit Memory parts that is listed with the NSN 5962-01-358-2690. This particular 21049369-101 NSN part has been manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor with the CAGE Code 81395. If you would like to purchase this particular NSN part, or any other available item on NSN World, feel free to fill out and submit an RFQ form as provided below. When you provide us information regarding your desired part number 21049369-101, quantities, and target price, our team members can quickly formulate a quote that specifically caters to your individual needs and requirements as closely as possible. Additionally, team members are always available for customer needs 24/7x365, thus responses to quote requests will be furnished in as little as 15 minutes or less.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-358-2690 Item Description: Microcircuit Memory | 5962 | 013582690 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
21049369-101 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAT | BODY WIDTH0 290 INCHES MINIMUM AND 0 320 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND WCLOCK |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC60 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY600 GATE EPLD |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PASCAL INDUSTRIAL LIGHT TANK STOCK AND 20 00 OUTPUT PASCAL INDUSTRIAL LIGHT TANK STOCK |
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