Thank you for your interest in our available PAL-025 Microcircuit Memory parts that is listed with the NSN 5962-01-331-7106. This particular PAL-025 NSN part has been manufactured by Bae Systems with the CAGE Code K0978. If you would like to purchase this particular NSN part, or any other available item on NSN World, feel free to fill out and submit an RFQ form as provided below. When you provide us information regarding your desired part number PAL-025, quantities, and target price, our team members can quickly formulate a quote that specifically caters to your individual needs and requirements as closely as possible. Additionally, team members are always available for customer needs 24/7x365, thus responses to quote requests will be furnished in as little as 15 minutes or less.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-331-7106 Item Description: Microcircuit Memory | 5962 | 013317106 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Pal-025 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
| MEMORY | ABKW | OVERALL HEIGHT0 400 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMBIPOLAR METAL-OXIDE SEMICONDUCTOR |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC12 00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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