Thank you for your interest in our available 1DT203L20TDB Microcircuit Memory parts that is listed with the NSN 5962-01-491-2679. This particular 1DT203L20TDB NSN part has been manufactured by Epson Electronics America Inc with the CAGE Code 61722. If you would like to purchase this particular NSN part, or any other available item on NSN World, feel free to fill out and submit an RFQ form as provided below. When you provide us information regarding your desired part number 1DT203L20TDB, quantities, and target price, our team members can quickly formulate a quote that specifically caters to your individual needs and requirements as closely as possible. Additionally, team members are always available for customer needs 24/7x365, thus responses to quote requests will be furnished in as little as 15 minutes or less.
NSN World is a leader in part procurement, and we are your sourcing solution for Epson Electronics America Inc parts like NSN 5962-01-491-2679 and other CAGE Code 61722 parts. National Stock Numbers, or NSNs, are 13-digit numeric codes that are used by NATO countries to identify and classify standardized material items of supply. With over 2 billion items in stock, NSN World is your part procurement solution for NSNs that have been sourced from top global manufacturers that we trust. Get started on the purchasing process today and see why customers steadily rely on NSN World for all their operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-491-2679 Item Description: Microcircuit Memory | 5962 | 014912679 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1dt203l20tdb | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AGAV | III END ITEM IDENTIFICATION | RADAR THREAT EMITTER AN/MST-T1; M3P REU-L |
| CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 2048 |
| CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND ASYNCHRONOUS |
| FEAT | SPECIAL FEATURES | 2,048 X 9-BIT; THIN CERAMIC DIP |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 155.0 DEG CELSIUS |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS ASYNCHRONOUS FIFO |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
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